Silicon epitaxy on H-terminated Si (100) surfaces at 250 °C
نویسندگان
چکیده
منابع مشابه
Silicon epitaxy on hydrogen-terminated Si(001) surfaces using thermal and energetic beams
Silicon epitaxy on hydrogen-terminated Si(001) surfaces has been studied using molecular dynamics simulations. Epitaxy on the dihydride-terminated Si(001 )-( 1 × 1) surface is inhibited for Si atoms at thermal energies due to strain hindrances created by hydrogen. At greater incident Si atom energies (2-10 eV), epitaxy proceeds primarily through "subplantation", i.e. subsurface implantation of ...
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ژورنال
عنوان ژورنال: Applied Surface Science
سال: 2016
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2016.03.212